1/9 october 2002 STD60NF06 n-channel 60v - 0.014 w - 60a dpak stripfet ? ii power mosfet (1) i sd 60a, di/dt 200 a/ m s, v dd 24v, tj t jmax n typical r ds (on) = 0.014 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization description this power mosfet series realized with stmicro- electronics unique stripfet process has specifical- ly been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high-efficiency isolated dc-dc converters for telecom and computer application. it is also intended for any application with low gate charge drive requirements. applications n high-efficiency dc-dc converters n ups and motor control n automotive absolute maximum ratings ( l ) pulse width limi ted by safe operating area type v dss r ds(on) i d STD60NF06 60 v < 0.016 w 60a symbol parameter value unit v ds drain-source voltage (v gs =0) 60 v v dgr drain-gate voltage (r gs =20k w ) 60 v v gs gate- source voltage 20 v i d drain current (continuous) at t c =25 c 60 a i d drain current (continuous) at t c = 100 c 42 a i dm ( l ) drain current (pulsed) 240 a p tot total dissipation at t c =25 c 110 w derating factor 0.73 w/ c dv/dt (1) peak diode recovery voltage slope 4 v/ns t stg storage temperature 55 to 175 c t j operating junction temperature dpak 1 3 (suffix at4o) internal schematic diagram
STD60NF06 2/9 thermal data avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1.36 c/w rthj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 30 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =30v) 350 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 60 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 10 m a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 24v r ds(on) static drain-source on resistance v gs =10v,i d =30a 0.014 0.016 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15 v , i d = 30 a 20 s c iss input capacitance v ds = 25 v, f = 1 mhz, v gs =0 1810 pf c oss output capacitance 360 pf c rss reverse transfer capacitance 125 pf
3/9 STD60NF06 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =30v,i d =30a r g = 4.7 w ,v gs =10v (see test circuit, figure 3) 16 ns t r rise time 108 ns q g total gate charge v dd =48v,i d =60 a v gs =10v 49 66 nc q gs gate-source charge 18 nc q gd gate-drain charge 14 nc symbol parameter test condit ions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd =30v,i d =30a, r g =4.7 w, v gs =10v (see test circuit, figure 3) 43 20 ns ns t d(off) t f t c off-voltage rise time fall time cross-over time vclamp =48 v, i d =60a r g =4.7 w, v gs =10v (see test circuit, figure 3) 40 12 21 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 60 a i sdm (2) source-drain current (pulsed) 240 a v sd (1) forward on voltage i sd =60a,v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60 a, di/dt = 100a/ m s, v dd = 25v, t j = 150 c (see test circuit, figure 5) 73 182 5 ns nc a
STD60NF06 4/9 safe operating area for dpak static drain-source on resistance thermal impedence for dpak transconductance transfer characteristics output characteristics
5/9 STD60NF06 normalized gate threshold voltage vs temperature source-drain diode forward characteristics gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature
STD60NF06 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STD60NF06 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
STD60NF06 8/9 tape and reel shipment (suffix ot4o)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
9/9 STD60NF06 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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